Triode/MOS tube/transistor/module

NPN, Vceo=100V, Ic=6A

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 58A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 6.2mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.976nF@30V, Vds=60V Id=58A Rds=6.2mΩ, working Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100A On-Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V, 9mΩ@4.5V Threshold Voltage (Vgs( th)@Id): 1.0V-2.5@250μA

650V, 60mΩ SiC MOSFET

Type PNP IC(A) -0.1 VCBO(V) -80 VCEO(V) -65 VEBO(V) -5 VCE(sat)(V) -0.5