Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

N-channel, 60V, 120A, 6mΩ@10V

Type Asy.DN Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 9.1 On-Resistance (mΩ) 10 Input Capacitance (Ciss) 455 Reverse Transfer Capacitance Crss(pF) 22 Gate Charge (Qg) 8

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Applications: adapters, chargers, LED drivers, PFC circuits

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 650V, 4A, 2.4Ω@10V