Triode/MOS tube/transistor/module

Q1: N-channel, 30V, 16A, 10.2mΩ@10V Q2: N-channel, 30V, 18A, 7.7mΩ@10V

P-channel, 250V, 205mA

50V, 8-channel high withstand voltage and high current Darlington array

This NPN bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 650V, 12A, 330mΩ@10V

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 30/36 Continuous Drain Current ID (A) 5