Triode/MOS tube/transistor/module

N-channel, 40V, 120A, 3.2mΩ@10V

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PNP 180W -230V -15A Application field: recommended for 100W high-fidelity audio amplifier output stage application

This Insulated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective Super Field Stop Trench structure that provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses. This IGBT is ideal for UPS and solar applications. The device combines a soft and fast combined encapsulation freewheeling diode with low forward voltage.

This PNP bipolar transistor is a spin-off of our popular SOT-23/SOT-323 three-lead devices. It is suitable for general amplifier applications and features a SOT-563 six-lead surface mount encapsulation. By putting two discrete devices into one encapsulation, this device is suitable for low power surface mount applications where board space is at a premium.

N-channel 20V 6A

Type P VDSS(V) -30 ID@TC=50?C(A) -12 PD@TC=50?C(W) 3.2 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.30V 27