Triode/MOS tube/transistor/module

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PNP

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 2.1 VGS(th)(v) 1.5 RDS(ON)(m?)@4.73V 95 Qg(nC)@4.5V - QgS(nC) 0.6 Qgd(nC) 0.8 Ciss(pF) 295 Coss(pF) 40 Crss(pF) 15

Type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 3A Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 45mΩ@4.5V, 3A

N-channel, 650V, 0.70?@10V, 10A

N-channel, 20V, 50A, 0.0029Ω@10V

N-channel, 60V, 2A, 200mΩ@10V

IC(A) 0.05 VCEO(V) 15 hFE(β) 70-200 fT(MHZ) 800 VCBO(V) 30 VCE(sat)(W) 0.5 Type NPN