Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 50A Power (Pd): 78W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 17nC@10V Input capacitance (Ciss@Vds): 1nF@15V, Vds=60V Id=50A Rds=11mΩ, operating temperature: - 55℃~+150℃@(Tj)

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 18/22 Continuous Drain Current ID (A) 6.5

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±25 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.7/8.2 Continuous Drain Current ID (A) 100

N-channel, 12V, 15A

N-channel, 60V, 0.38A, 2.3Ω@10V

PNP, 60V, 600mA