Triode/MOS tube/transistor/module

N-channel 650V 4A

PNP, Vceo=-25V, Ic=-500mA

N+P channel, 60V, 5.3A, 28mΩ@10V; -60V, -4.9A, 50mΩ@-10V

N channel

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.

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New product, ULN2003AFWG upgraded product, field effect tube as output tube, lower tube pressure drop, less chip heat generation, better driving performance.

N-channel 60V 80A