Triode/MOS tube/transistor/module

MOS tube, TO-252, N channel, withstand voltage: 80V

CSD25483F4 20V P-Channel NexFET™ Power MOSFET, CSD25483F4

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Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 16 VGS(th)(v) 1.7 RDS(ON)(m?)@4.283V 9.9 Qg(nC)@4.5V - QgS(nC) 7 Qgd(nC) 4 Ciss(pF) 4000 Coss(pF) 898 Crss(pF) 39

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.