Triode/MOS tube/transistor/module

This power MOSFET has low on-resistance. This device is suitable for applications such as power switches in portable equipment. Best suited for 1 to 2 cell Li-ion battery applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

Dual P-channel, -30V, -2.9A, 0.111Ω@-10V

VCES(V) 1350 IC(A)@142℃ 25 VCE(sat)(V) 2 E(off)(mj) 0.65 Vf(V) 2.3

Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 8.5 VGS(th)(v) 0.7 RDS(ON)(m?)@4.293V 24 Qg(nC)@4.5V 6 QgS(nC) 1.5 Qgd(nC) 2.5 Ciss(pF) 580 Coss(pF) 95 Crss(pF) 57

PNP, Vceo=-60V, Ic=-600mA

N-channel, 60V, 100A, 2.8mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 210A Power (Pd): 186W On-Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.7V@250uA Gate charge (Qg@Vgs): 93nC@10V Input capacitance (Ciss@Vds): 5.8nF@30V, Vds=60V Id=210A Rds=2.3mΩ, working Temperature: -55℃~+150℃@(Tj)