Triode/MOS tube/transistor/module
MOSFET Type P+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 53/60 Continuous Drain Current ID (A) 4.1
説明
The MJW21194 bipolar complementary audio power transistor uses pierced emitter technology and is designed for high power audio output, disk head positioner and linear applications.
説明
ST (STMicroelectronics)
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ST (STMicroelectronics)
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TI (Texas Instruments)
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CSD13383F4 12V N-Channel FemtoFET MOSFET 3-PICOSTAR
説明
ST (STMicroelectronics)
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Prisemi (core guide)
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TI (Texas Instruments)
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CSD17307Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 12.1mΩ
説明
APM (Jonway Microelectronics)
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This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.
説明
TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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