Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 13A Power (Pd): 33W On-Resistance (RDS(on)@Vgs,Id): 315mΩ@10V,6A Threshold Voltage ( Vgs(th)@Id): 1.9V@250uA Gate charge (Qg@Vgs): 33nC@10V Input capacitance (Ciss@Vds): 1.734nF@50V, Vds=100V Id=13A Rds=315mΩ, operating temperature: -55℃~+150℃@(Tj)

NPN,50V,2A,hfe=180~450

PNP, Vceo=-100V, Ic=-1A

High Voltage Super Junction MOSFET

PNP

MOS full bridge, 20V/5.7A(-20V/-4.7A)

N-channel, 20V, 5A