Triode/MOS tube/transistor/module

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N-channel, 50V, 9.1A

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 50A Power (Pd): 55W On-Resistance (RDS(on)@Vgs,Id): 8.9mΩ@10V,16A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 28nC@10V Input capacitance (Ciss@Vds): 3.05nF@20V Operating temperature: -55℃~+150℃@(Tj ) DFN5*6encapsulation;

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance for industrial applications while maintaining excellent robustness and switching performance.