Triode/MOS tube/transistor/module

Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Cutoff Current (Icbo): 100nA DC Current Gain (hFE@ Ic, Vce): 140@5mA, 10V

YJQ1216A-F1-1100HF

P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 13A Power (Pd): 2.5W On-resistance (RDS(on)Max@Vgs,Id): 15mΩ@10V, 12A

N-channel, 400V, 10A

P tube, -30V, -16A, open -1.5V, 10mΩ(typ)@10V, 14mΩ(typ)@-4.5V

PNP

N-channel, 30V, 6.5A, 30mΩ@10V