Triode/MOS tube/transistor/module

N-channel, 18V, 3.6A, 80mΩ@4.5V

Voltage VDSS650V, on-resistance Rds0.86 ohms, charge Qg44nC, current ID10A

This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel 20V

Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 8 VGS(th)(v) 1.8 RDS(ON)(m?)@4.292V 28 Qg(nC)@4.5V 6 QgS(nC) 1.5 Qgd(nC) 2.5 Ciss(pF) 560 Coss(pF) 92 Crss(pF) 55

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.