Triode/MOS tube/transistor/module

N-channel, 200V, 30A, 0.75Ω@10V

N-channel, 200V, 30A, 0.75Ω@10V

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 8 ID(A)Max. -6 VGS(th)(v) -0.5 RDS(ON)(m?)@4.52V 23 Qg(nC) @4.5V 27.3 QgS(nC) 3.6 Qgd(nC) 6.5 Ciss(pF) 1025 Coss(pF) 220 Crss(pF) 187

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which is specially tailored to minimize on-resistance and maintain low gate charge for superior switching performance.

PNP, Vceo=-30V, Ic=-3A, hfe=160~320

PNP

N-channel, 30V, 7.5A

Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -5.5 VGS(th)(v) -2 RDS(ON)(m?)@4.341V 46 Qg( nC)@4.5V 7.5 QgS(nC) 2.4 Qgd(nC) 3.5 Ciss(pF) 1250 Coss(pF) 165 Crss(pF) 124

Gear: 250-600

This bipolar power transistor is suitable for general purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

Applications: adapters, chargers, LED drivers, PFC circuits

This bipolar power transistor is suitable for line-powered audio output amplifiers, switch-mode power drivers, and other switching applications.