Triode/MOS tube/transistor/module

P-channel, -60V, -14A, 103mΩ@-4.5V

P-channel, -60V, -14A, 103mΩ@-4.5V

N-channel, 500V, 14A, 400mΩ@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, P channel, withstand voltage: -20V, current: -40A, 10V internal resistance (Max): 4.5V internal resistance (Max): 0.02Ω, power: 50W

NPN bipolar transistors are spin-offs of our popular SOT23, SOT323, SOT563, SOT963 3-lead devices. The device is suitable for general amplifier applications and comes in a SOT1123 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.

This P-channel MOSFET is produced using an advanced Power Trench process, which is specially adapted to minimize on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

1200v/200a 3.2Vce

The MJE170/180 series are suitable for low power audio amplifier and low current high speed switching applications. MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.