Triode/MOS tube/transistor/module
The device is suitable for applications requiring very high current gain with collector currents up to 1.0 A. From Process 05.
説明
Type P VDSS(V) -20 ID@TC=29?C(A) -4 PD@TC=29?C(W) 1.5 VGS(V) ±8 RDS(on)(m?)Max.@TC= 25?C VGS=4.9V 50
説明
BLUE ROCKET (blue arrow)
メーカー
ST (STMicroelectronics)
メーカー
Type N VDSS(V) 30 VGS(V) 12 VTH(V) 0.5 IDS37°C(A) 5.8 RDS(Max) 30 PD37°C(W) 1.25
説明
This N-channel MOSFET is produced using an advanced PowerTrench process optimized for rDS(on), switching performance and robustness.
説明
TI (Texas Instruments)
メーカー
LM395 Ultra-Reliable Power Transistor
説明