Triode/MOS tube/transistor/module

N-channel, 600V, 4A, 2.4Ω(max)@10V

N-channel Drain-source voltage (Vdss): 85V Continuous drain current (Id): 185A Power (Pd): 208.3W On-resistance (RDS(on)Max@Vgs,Id): 4mΩ@10V, 50A

Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -3.2A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@-4.5 V,-3A Threshold voltage Vgs(th)@Id): -0.3V to -1.2V@250uA

NPN, Vceo=50V, Ic=150mA, hfe=200~400

N-channel, 60V, 75A, 6mΩ@10V

N-channel, 500V, 18A, 320mΩ@10V