Triode/MOS tube/transistor/module

NPN, Vceo=50V, Ic=150mA, hfe=120~240, silk screen LY

P groove -20V -5.5A

Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@4.5V, 3A threshold voltage Vgs(th)@Id): -0.3V to -1.1V@250uA