Triode/MOS tube/transistor/module

N channel

N-channel, 120V

Configuration Single Type N-Ch VDS(V) 400 VGS(V) 30 ID(A)Max. 7 VGS(th)(v) 3.5 RDS(ON)(m?)@4.411V - Qg(nC)@4.5V - QgS(nC) 3.7 Qgd(nC) 11 Ciss(pF) 700 Coss(pF) 94 Crss(pF) 12

Configuration Single Type N-Ch VDS(V) 650 VGS(V) 30 ID(A)Max. 4 VGS(th)(v) 3 RDS(ON)(m?)@4.413V - Qg(nC)@4.5V - QgS(nC) 2.3 Qgd(nC) 2.1 Ciss(pF) 550 Coss(pF) 46 Crss(pF) 2.3

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 25 VGS(th)(v) 3 RDS(ON)(m?)@4.408V - Qg(nC)@4.5V - QgS(nC) 14 Qgd(nC) 10 Ciss(pF) 2350 Coss(pF) 155 Crss(pF) 45

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 12 ID(A)Max. 5.6 VGS(th)(v) 0.8 RDS(ON)(m?)@4.28V 27 Qg(nC)@4.5V 5.5 QgS(nC) 2.1 Qgd(nC) 1.5 Ciss(pF) 525 Coss(pF) 57 Crss(pF) 45

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 3.2 VGS(th)(v) 0.85 RDS(ON)(m?)@4.55V 45 Qg(nC)@4.5V 6.4 QgS(nC) 0.54 Qgd(nC) 1.25 Ciss(pF) 382 Coss(pF) 41 Crss(pF) 33

Type: N+P Channel@@Drain-Source Voltage (Vdss): 30V/-30V@@Continuous Drain Current (Id): 16A/-13A@@Power (Pd): 2.1W/2.1W@@On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V, 8A/40mΩ@-10V, -6A@@Threshold voltage (Vgs(th)@Id): 2.5V@250uA/-2.5V@250uA

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 60 VGS(th)(v) 0.75 RDS(ON)(m?)@4.355V 3.5 Qg(nC)@4.5V 15 QgS(nC) 3 Qgd(nC) 4 Ciss(pF) 2016 Coss(pF) 391 Crss(pF) 130

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -6 VGS(th)(v) -1.5 RDS(ON)(m?)@4.331V 48 Qg( nC)@4.5V 6.4 QgS(nC) 2.7 Qgd(nC) 3.1 Ciss(pF) 645 Coss(pF) 272 Crss(pF) 105

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 6 VGS(th)(v) 0.7 RDS(ON)(m?)@4.261V 23 Qg(nC)@4.5V 8.8 QgS(nC) 0.8 Qgd(nC) 3.3 Ciss(pF) 550 Coss(pF) 100 Crss(pF) 85

UMT1N-F2-0000HF

P-channel, -30V, -3A, 50mΩ@-10V