Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

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N-channel, 60V, 16A, 85mΩ@4.5V

The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. FJP13009 provides various types of h

P-channel, -30V, -9A, 20mΩ@-10V