Triode/MOS tube/transistor/module

P+P channel, -60V, -5.3A, 58mΩ@10V

PNP, Vceo=-120V, Ic=-800mA, hfe=120~240

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 30V, current: 150A, 10V internal resistance (Max): 0.004Ω, power: 240W

P-channel, -40V, -12A, 10mΩ@10V

N-Channel 70V 0.1A 0.5W