Triode/MOS tube/transistor/module

P channel -30V

20V 90A 4mΩ TO-252 encapsulation

N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 3A Power (Pd): 1.4W On-resistance (RDS(on)Max@Vgs,Id): 100mΩ@10V, 2.6A

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 80A Power (Pd): 78W On-Resistance (RDS(on)@Vgs,Id): 9.0mΩ @10V,20A Threshold Voltage (Vgs(th)@Id): 2.0V@250uA Gate Charge (Qg@Vgs): 36.5nC@10V Input Capacitance (Ciss@Vds): 1.978nF@50V ,Vds=100V Id= 80A Rds=9.0mΩ, working temperature: -55℃~+150℃@(Tj)

Voltage VDSS650V, on-resistance Rds1.2 ohms, charge Qg29nC, current ID7A