Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
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Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 20V, ID current 2.3A, RDON on-resistance 126mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.4-1.0V,
説明
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. SuperFET II FRFET MOSFETs feature faster and more robust intrinsic body diode performance and fast switching for better reliability and high energy efficiency especially in resonant switching applications. SuperFET II FRFETs are ideal for switching power supply applications such as server/telecom power supplies, solar inverters, FPD TV power supplies, computing power supplies, lighting and industrial power supply applications.
説明
DIODES (US and Taiwan)
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LONTEN (Longteng Semiconductor)
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APM (Jonway Microelectronics)
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CJ (Jiangsu Changdian/Changjing)
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CHIPLINK (core connection)
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