Triode/MOS tube/transistor/module

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 8-40, collector current IC12A

This N-channel MV MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

NPN, Vceo=20V, Ic=1.25A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 70A, 10V internal resistance (Max): 0.0068Ω, 4.5V internal resistance (Max): 0.011Ω, power: 65W

ON Semiconductor's low saturation voltage transistor family is a miniature surface mount device with ultra-low saturation voltage saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows these bipolar transistor devices to be driven directly from the control output of the PMU, while the linear gain (Beta) makes them ideal components for analog amplifiers.

N-channel 600V 4A