Triode/MOS tube/transistor/module

Darlington NPN, VCEO:30 V, fT:220 MHz, PD:200 mW, IC:500 mA, 20000 hFE

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -32A Power (Pd): 96W On-Resistance (RDS(on)@Vgs,Id): 8.0mΩ@10V,- 32A threshold voltage (Vgs(th)@Id): -1.5V@250uA P-channel, -30V, -32A, 8.0mΩ@-10V

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 150mW DC current gain (hFE@Ic,Vce): 100@10mA,1V 100~300 PNP 40V 0.2A

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -5.5A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 25mΩ@-4.5 V,-4A Threshold voltage Vgs(th)@Id): -0.3V to -1V@250uA

P tube, -20V, -5.6A, open -0.68V, 35.8mΩ@10V, 46.4mΩ@-4.5V

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 16/23 Continuous Drain Current ID (A) 20

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -4.4 VGS(th)(v) -0.8 RDS(ON)(m?)@4.46V 50 Qg(nC) @4.5V 10.2 QgS(nC) 1.89 Qgd(nC) 3.1 Ciss(pF) 857 Coss(pF) 114 Crss(pF) 108

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 45 VGS(th)(v) 3 RDS(ON)(m?)@4.221V - Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 12 Ciss(pF) 1800 Coss(pF) 215 Crss(pF) 42