Triode/MOS tube/transistor/module

NPN, Vceo=25V, Ic=2A, hfe=820~1800

N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 70A Power (Pd): 70W On-resistance (RDS(on)Max@Vgs,Id): 7.5mΩ@10V, 20A

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 60A Power (Pd): 62.5W On-Resistance (RDS(on)@Vgs,Id: 6.5mΩ@10V, 30A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 52.1nC@10V Input capacitance (Ciss@Vds): 2.1nF@30V , Vds=60v Id=60A Rds=6.5mΩ, Working temperature: -55℃~+150℃@(Tj)

Configuration Single Type N-Ch VDS(V) 650 VGS(V) 30 ID(A)Max. 2 VGS(th)(v) 3 RDS(ON)(m?)@4.414V - Qg(nC)@4.5V - QgS(nC) 1.2 Qgd(nC) 5 Ciss(pF) 310 Coss(pF) 39 Crss(pF) 6

N-channel 600V 8A

NPN 400V 1.5A

NPN,Vceo=400V,Ic=8A

N-channel, 60V, 12A, 12mΩ@10V