Triode/MOS tube/transistor/module

N-channel, 600V, 20A, 165mΩ@10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -25V Collector Current (Ic): -500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE( sat)@Ic,Ib): 600mV@500mA HFE: 200-350

This 8A 80 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications.

Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Collector current (Ic): 100mA Collector-emitter breakdown voltage (Vceo): 50V NPN, Vcc=50V, Io=100mA, Pd=200mW

NPN, Vceo=25V, Ic=500mA, silk screen: J3