Triode/MOS tube/transistor/module

Interface - Driver, Receiver, Transceiver 8/0

N-channel 20V 500mA

NPN, Vceo=30V, IC=800mA, PD=0.625W

This 6A, 100 V, PNP bipolar power transistor is suitable for general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.

Type: P-channel Drain-source voltage (Vdss): 40V Continuous Drain current (Id): 6.0A Power (Pd): 1.6W On-resistance (RDS(on)@Vgs,Id: 32mΩ@10V,5A Threshold voltage (Vgs(th)@Id): -1.6V@250uA Gate charge (Qg@Vgs): 16nC@10V Input capacitance (Ciss@Vds): 1.10nF@20V , Vds=40v Id=6.0A Rds=32mΩ, Working temperature: -55℃~+150℃@(Tj)

Type: P-channel Drain-source voltage (Vdss): 40V Continuous Drain current (Id): 6.0A Power (Pd): 1.6W On-resistance (RDS(on)@Vgs,Id: 32mΩ@10V,5A Threshold voltage (Vgs(th)@Id): -1.6V@250uA Gate charge (Qg@Vgs): 16nC@10V Input capacitance (Ciss@Vds): 1.10nF@20V , Vds=40v Id=6.0A Rds=32mΩ, Working temperature: -55℃~+150℃@(Tj)

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Triac parameters VDRM/VRRM 600V RMS ON state current IT(RMS) 2A

General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=-30V Id=-23A Rds=11mΩ (13.9mΩ maximum) DFN3.3*3.3encapsulation;