Triode/MOS tube/transistor/module

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

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Field effect transistor N-channel: Drain-source voltage VDS 40V ID=14A(vgs=10v) RDS(ON) ＜ 13.0mΩ (VGS = 10V) RDS(ON) ＜ 16.5mΩ (VGS = 4.5V) Gate threshold voltage VGS (th) 1V-3V

This 20V N-channel MOSFET uses a high voltage PowerTrench process. This product is ideal for power management applications.

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -13 VGS(th)(v) - RDS(ON)(m?)@4.431V - Qg(nC)@ 4.5V 21 QgS(nC) 4.3 Qgd(nC) 5.2 Ciss(pF) 1050 Coss(pF) 70 Crss(pF) 30

N-channel 1000V 2.5A

NPN, Vceo=45V, Ic=0.1A, hfe=200~450, silk screen 1F

N channel

N-channel, 600V, 4A, 2Ω@10V