Triode/MOS tube/transistor/module

Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 10mΩ ID(A) 50A

N-channel 400V 2.1A

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

N channel

Type N VDS(V) 40V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 10mΩ ID(A) 60A

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 420@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Medium voltage N-channel MOSF 200V30A 70 milliohms