Triode/MOS tube/transistor/module

NPN, 50V, 500mA

P-channel, -20V, -3.2A

P-channel, -20V, -2.6A, 150mΩ@-4.5V

The excellent gain linearity and safe operating area performance of this bipolar power transistor make it suitable for high-fidelity audio amplifier output stages and other linear applications.

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.6A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 17mΩ@10V, 5.6A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 12nC@10V Input Capacitance (Ciss@Vds): 0.526nF@15V , Vds=30V Id =5.6A Rds=17mΩ, working temperature: -55℃~+150℃@(Tj);

Voltage VDSS650V, conduction resistance Rds2.8 ohms, charge Qg25nC, current ID4A

These N-channel low-threshold 2.5V-specified MOSFETs are produced using an advanced PowerTrench process that is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.