Triode/MOS tube/transistor/module

600V 20A

N channel

N channel

Four-quadrant bidirectional thyristor, parameter off-state repetitive peak voltage VDRM/VRRM: 600V on-state RMS current IT(RMS) 0.8A, conduction voltage drop VTM: 1.55V, gate trigger current Igt3<5mA

NPN, 100V, 2A, E-Line

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 7.2A Power (Pd): 13W On-Resistance (RDS(on)@Vgs,Id): 78mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 6.0nC@10V Input capacitance (Ciss@Vds): 0.52nF@50V , Vds=100V Id=7.2A Rds=78mΩ, Working temperature: -55℃~+150℃@(Tj)

N-channel, 20V, 6.2A, 30mΩ@2.5V