Triode/MOS tube/transistor/module

P-channel, -30V, -9A, 18mΩ@-10V

N-channel, 30V, 17.2A, 5.6mΩ@10V

The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 0.8A Power (Pd): 0.43W On-Resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V,0.2 A Threshold voltage (Vgs(th)@Id): 0.9V@250uA Gate charge (Qg@Vgs): 1.4nC@10V Input capacitance (Ciss@Vds): 0.034nF@25V, Vds=60V Id=0.8A Rds =1.2mΩ, working temperature: -55℃~+150℃@(Tj)