Triode/MOS tube/transistor/module

FN1006-3encapsulation 0.71A 20V

Built-in reverse diode, NPN, 100V, 16A, 20W

Field Effect Transistor (MOSFET) Type: N-channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 80A Power (Pd): 78W On-resistance (RDS(on)@Vgs,Id: 9.0mΩ@ 10V, 20A Threshold Voltage (Vgs(th)@Id): 2.0V@250uA Gate Charge (Qg@Vgs) 36.5nC@10V Input Capacitance (Ciss@Vds): 1.978nF@30V , Vds=100v Id=80A Rds =9.0mΩ, working temperature: -55℃~+150℃@(Tj)

P tube, -20V, -4.8A, open -0.7V, 45mΩ@-4.5V

N tube 650V 8A TO-220F 565mΩ

P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 25A Power (Pd): 3W On-resistance (RDS(on)Max@Vgs,Id): 9.2mΩ@10V,12A

Gallium nitride GaN power device: Vds:650V Id: 9A Rds:240mΩ Qg:21.5nC Qrr:39nC