Triode/MOS tube/transistor/module

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

ON Semiconductor's e2PowerEdge Low Saturation Voltage Transistor family is a miniature surface mount device with ultra-low saturation voltage (VCE(sat)) and high current gain capability in a small outline 2x2mm plastic leadless encapsulation. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.