Triode/MOS tube/transistor/module

This device includes two 40V N-channel MOSFETs in a dual Power (3.3 mm X 5 mm) encapsulation. HS source and LS drain internally connected for half bridge/full bridge, low source inductance encapsulation, low rDS(on) / Qg FOM silicon.

Automotive Power MOSFETs for compact and efficient designs with 5x6mm LFPAK encapsulation and high thermal performance. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications that require higher board-level reliability.

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.