Triode/MOS tube/transistor/module
The MCH6341 is a power MOSFET, -30V, 59mΩ, -5A, single P-channel, for general switching applications.
説明
The FDFS2P106A combines the superior performance of PowerTrench MOSFET technology with an extremely low positive voltage drop Schottky barrier rectifier within an SO-8 encapsulation. This device is ideally suited as a single encapsulation solution for DC-DC converters. It features fast switching, low gate charge MOSFETs with very low on-resistance. Independently connected Schottky diodes allow it to be used in various DC/DC converter topologies.
説明
This N-channel small-signal MOSFET is produced using ON Semiconductor's proprietary high-cell-density DMOS technology designed to minimize on-resistance while providing robust, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver up to 2A of pulsed current, especially for low voltage, low current applications.
説明
REASUNOS (Ruisen Semiconductor)
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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