Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 55V, 44A, 27mΩ@10V

NPN 300V 100mA

N-channel, 30V, 65A, 10mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): -60V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V Characteristic frequency (fT): 100MHz 100-250 60V, 1A,

NPN, Vceo=65V, Ic=100mA, hfe=420~800

Medium and low voltage TRENCH MOSFET