Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
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GOFORD (valley peak)
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This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
説明
NCE (Wuxi New Clean Energy)
メーカー
CBI (Creation Foundation)
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CJ (Jiangsu Changdian/Changjing)
メーカー
TECH PUBLIC (Taizhou)
メーカー
CJ (Jiangsu Changdian/Changjing)
メーカー
Type N VDS(V) 20V VGS(V) ±12V Vth(V) 1V RDS(ON)(mΩ) 9mΩ ID(A) 60A
説明