Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
メーカー
CJ (Jiangsu Changdian/Changjing)
メーカー
: Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -300V Collector current (Ic): -200mA Power (Pd): 300mW Collector cut-off current (Icbo): 250nA Collector-emitter saturation voltage (VCE (sat)@Ic,Ib): 200mV@20mA HFE 100-200
説明
40A1200V Infineon IGBT, widely used in induction cooker, motor, welding machine industry.
説明
ST (STMicroelectronics)
メーカー
BLUE ROCKET (blue arrow)
メーカー
NPN Vceo=30V Ic=0.5A PC=0.35W
説明
Field Effect Transistor (MOSFET) P Ditch VDSS:30V ID:15A
説明