Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 60A Power (Pd): 30W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,12A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 72nC@10V Input Capacitance (Ciss@Vds): 2.66nF@20V Operating Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

This is a 30 V N-channel power MOSFET.

N-channel, 600V, 5A, 2.15Ω@10V

Type: P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 4.5A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 40mΩ@-4.5V, -3A threshold voltage (Vgs(th)@Id): -1.1V@250uA

N-channel, Vce=650V, Ic=40A

N-channel, 650V, 7A, 1.6Ω

High Voltage, High Current Darlington Transistor Array