Triode/MOS tube/transistor/module

Utilizing a proprietary high-density trench MOSFET process, the part is designed for a low rDS(on) and low Qg form factor with avalanche ruggedness suitable for a wide variety of switching applications.

This N-channel MOSFET uses Fairchild Semiconductor's advanced Power Trench

EFC2K103NUZTDG has ultra-low on-resistance, high current characteristics, and adopts small and thin CSP encapsulation. Best suited for 1-cell Li-ion battery protection circuits.