Triode/MOS tube/transistor/module
Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
説明
The encapsulation integrates two N-channel devices connected internally in a common-source configuration and uses gate shielding techniques. This greatly reduces the parasitic effect of encapsulation and optimizes the heat transfer path to the bottom common source pad. High power density is achieved in an extremely small size (5 x 6 mm).
説明
MOSFET, N-Channel, 30V, 15mΩ, UDFN
説明
RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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RENESAS (Renesas)/IDT
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ST (STMicroelectronics)
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Taiwan Semiconductor
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TI (Texas Instruments)
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CSD22204W 8V P-Channel NexFET Power MOSFET 9-DSBGA
説明