Triode/MOS tube/transistor/module

N-channel 60V 55A

Field Effect Transistor (MOSFET) Type: Dual N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 25A Power (Pd): 3.0W On-Resistance (RDS(on)@Vgs,Id): 4.5mΩ@4.5V,10A Threshold Voltage (Vgs(th)@Id): 0.8V@250uA Gate Charge (Qg@Vgs): [email protected] Input Capacitance (Ciss@Vds): 1.31nF@10V ,Vds =20V Id=25A Rds=4.5mΩ, working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;

ON Semiconductor's BC817?40W is a general purpose NPN transistor with SC?70/SOT?323 encapsulation.

Type: Dual N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 15A Power (Pd): 2.5W On-Resistance (RDS(on)@Vgs,Id: 8.8mΩ@10V, 20A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 12nC@10V Input capacitance (Ciss@Vds): 0.980nF@0V, Vds=30v Id=15A Rds=8.8mΩ, Working temperature: -55℃~+150℃@(Tj) SOP8encapsulation;

50A 60V

N channel

N-channel 700V/8.6A/0.75Ω/TO-220FP with Zener protection power MOS tube

NPN,Vceo=25V,Ic=1.5A