Triode/MOS tube/transistor/module

N-channel, 10V, 9A, 360mΩ@10V

NPN,Vceo=40V,Ic=200mA

NPN, Vcc=50V, Io=100mA, Pd=200mW

NPN, Vceo=50V, Ic=150mA, hfe=200~400

NPN, Vo=50V, Io=100mA

N-channel, Vds=30V, Id=50A

P-channel, -30V, -27.6A, 42mΩ@-4.5V

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 25 ID(A)Max. 70 VGS(th)(v) 3 RDS(ON)(m?)@4.398V - Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 12 Ciss(pF) 4100 Coss(pF) 255 Crss(pF) 100