Triode/MOS tube/transistor/module
This is an old model and there is no difference between FGL60N100BNTDTU
説明
This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.
説明
Applications: communication modules, industrial control, artificial intelligence, consumer electronics
説明
TECH PUBLIC (Taizhou)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 18/25 Continuous Drain Current ID (A) 5.8
説明
DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
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ST (STMicroelectronics)
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