Triode/MOS tube/transistor/module

P channel -30V -6A

P-channel, -30V, -13.5A, 11mΩ@-10V

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N-channel, 600V, 9.3A, 600mΩ@10V

N-channel, 150V, 43A, 0.042mΩ@10V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

N-channel, 500V, 4.4A, 1.5Ω@10V

N+P channel, 30V, 8A, 18mΩ@10V; -30V, -8A, 32mΩ@-10V

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher performance. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.