Triode/MOS tube/transistor/module

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 54/70 Continuous Drain Current ID (A) 4.1

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 400V Collector Current (Ic): 200mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic, Ib): 750mV@50mA, 5mA

N-channel, 60V, 5A