Triode/MOS tube/transistor/module

P-channel, -40V, -30A, 18mΩ@-10V

NPN, Vceo=30V, Ic=500mA, hfe=144~202

Field Effect Transistor (MOSFET) N-channel VDSS:30V ID:15A

The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The MC1413, B with 2.7 kΩ series input resistors is suitable for systems using 5.0 V TTL or CMOS logic.

N-channel, 30V, 16A, 6.8mΩ@10V

Power MOSFET, -20 V, -6.7 A, Single P-Channel, ChipFET

BC856BS-F2-0000HF

N-channel, 30V, 30A, 13.5mΩ@10V

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.